Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene
Identifieur interne : 000F36 ( Russie/Analysis ); précédent : 000F35; suivant : 000F37Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene
Auteurs : RBID : Pascal:99-0063171Descripteurs français
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Abstract
Electroluminescent devices using Z-type Langmuir-Blodgett multilayer films of poly(hexaethyleneglycol-3========Prime;,4========Prime;-dihexyl-2,2';5', 2========Prime;;5========Prime;,2========Prime;′;5========Prime;′,2========Prime;========Prime;-pentathiophene-5,5""-dicarboxylate (PPOE6) as the active region have been fabricated. The organic material was incorporated in a sandwich structure between indium tin oxide (ITO) and aluminium electrodes. Diode-like characteristics were observed, with a power law relationship between current and voltage indicative of charge injection at the contacts. It is thought that the recombination of electrons and holes (injected at the aluminium and ITO contacts, respectively) was responsible for the electroluminescent effect. The threshold voltage for the generation of yellow light (visible in a darkened room) was ca. 4 V. Using a calibrated photodiode to measure the optical output power, a quantum efficiency of the order of 1 x 10-2% was calculated.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene</title><author><name sortKey="Goldenberg, L M" uniqKey="Goldenberg L">L. M. Goldenberg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Chemical Physics in Chernogolovka, Russian Academy of Science, Chernogolovka</s1><s2>142432 Moscow Region</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>142432 Moscow Region</wicri:noRegion></affiliation></author><author><name sortKey="Leclerc, M" uniqKey="Leclerc M">M. Leclerc</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de Chimie, Université de Montréal</s1><s2>Montréal, Qué. H3C 3J7</s2><s3>CAN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montréal, Qué. H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Donat Bouillud, A" uniqKey="Donat Bouillud A">A. Donat-Bouillud</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de Chimie, Université de Montréal</s1><s2>Montréal, Qué. H3C 3J7</s2><s3>CAN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montréal, Qué. H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Pearson, C" uniqKey="Pearson C">C. Pearson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Engineering and Centre for Molecular Electronics, University of Durham</s1><s2>Durham DH1 3LE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Durham DH1 3LE</wicri:noRegion></affiliation></author><author><name sortKey="Petty, M C" uniqKey="Petty M">M. C. Petty</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Engineering and Centre for Molecular Electronics, University of Durham</s1><s2>Durham DH1 3LE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Durham DH1 3LE</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0063171</idno><date when="1998">1998</date><idno type="stanalyst">PASCAL 99-0063171 INIST</idno><idno type="RBID">Pascal:99-0063171</idno><idno type="wicri:Area/Main/Corpus">015B23</idno><idno type="wicri:Area/Main/Repository">016D45</idno><idno type="wicri:Area/Russie/Extraction">000F36</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electroluminescent device</term><term>Langmuir Blodgett layer</term><term>Organic material</term><term>Quantum yield</term><term>Thiophene derivative polymer</term><term>Voltage capacity curve</term><term>Voltage current curve</term><term>Voltage threshold</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif électroluminescent</term><term>Couche Langmuir Blodgett</term><term>Matériau organique</term><term>Thiophène dérivé polymère</term><term>Seuil tension</term><term>Caractéristique courant tension</term><term>Caractéristique capacité tension</term><term>Rendement quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electroluminescent devices using Z-type Langmuir-Blodgett multilayer films of poly(hexaethyleneglycol-3========Prime;,4========Prime;-dihexyl-2,2';5', 2========Prime;;5========Prime;,2========Prime;′;5========Prime;′,2========Prime;========Prime;-pentathiophene-5,5""-dicarboxylate (PPOE6) as the active region have been fabricated. The organic material was incorporated in a sandwich structure between indium tin oxide (ITO) and aluminium electrodes. Diode-like characteristics were observed, with a power law relationship between current and voltage indicative of charge injection at the contacts. It is thought that the recombination of electrons and holes (injected at the aluminium and ITO contacts, respectively) was responsible for the electroluminescent effect. The threshold voltage for the generation of yellow light (visible in a darkened room) was ca. 4 V. Using a calibrated photodiode to measure the optical output power, a quantum efficiency of the order of 1 x 10<sup>-2</sup>% was calculated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>327-29</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene</s1></fA08><fA11 i1="01" i2="1"><s1>GOLDENBERG (L. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LECLERC (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>DONAT-BOUILLUD (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>PEARSON (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>PETTY (M. C.)</s1></fA11><fA12 i1="01" i2="1"><s1>STROEVE (Pieter)</s1><s9>préf.</s9></fA12><fA14 i1="01"><s1>Institute of Chemical Physics in Chernogolovka, Russian Academy of Science, Chernogolovka</s1><s2>142432 Moscow Region</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Département de Chimie, Université de Montréal</s1><s2>Montréal, Qué. H3C 3J7</s2><s3>CAN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>School of Engineering and Centre for Molecular Electronics, University of Durham</s1><s2>Durham DH1 3LE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>Center on Polymer and Macromolecular Assemblies, Department of Chemical Engineering and Materials Science, University of California</s1><s2>Davis, CA</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA20><s1>715-717</s1></fA20><fA21><s1>1998</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000071007471620</s5></fA43><fA44><s0>0000</s0><s1>© 1999 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>99-0063171</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Electroluminescent devices using Z-type Langmuir-Blodgett multilayer films of poly(hexaethyleneglycol-3========Prime;,4========Prime;-dihexyl-2,2';5', 2========Prime;;5========Prime;,2========Prime;′;5========Prime;′,2========Prime;========Prime;-pentathiophene-5,5""-dicarboxylate (PPOE6) as the active region have been fabricated. The organic material was incorporated in a sandwich structure between indium tin oxide (ITO) and aluminium electrodes. Diode-like characteristics were observed, with a power law relationship between current and voltage indicative of charge injection at the contacts. It is thought that the recombination of electrons and holes (injected at the aluminium and ITO contacts, respectively) was responsible for the electroluminescent effect. The threshold voltage for the generation of yellow light (visible in a darkened room) was ca. 4 V. Using a calibrated photodiode to measure the optical output power, a quantum efficiency of the order of 1 x 10<sup>-2</sup>% was calculated.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif électroluminescent</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electroluminescent device</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo electroluminiscente</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Couche Langmuir Blodgett</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Langmuir Blodgett layer</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Capa Langmuir Blodgett</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Matériau organique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Organic material</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Material orgánico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Seuil tension</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Voltage threshold</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Umbral tensión</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique capacité tension</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Voltage capacity curve</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica capacidad tensión</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Quantum yield</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>09</s5></fC03><fN21><s1>032</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Organized Molecular Films</s1><s2>8</s2><s3>Pacific Grove CA USA</s3><s4>1997-08-24</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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